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Si7655DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, b
Maximum Junction-to-Case (Drain)
t ?? 10 s
Steady State
R thJA
R thJC
21
1.7
26
2.2
°C/W
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 20
- 12
2.6
V
mV/
°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 55 °C
- 0.5
- 1.1
± 100
-1
- 10
V
nA
μA
On-State Drain
Current a
I D(on)
V DS ? - 5 V, V GS = - 10 V
- 20
A
V GS = - 10 V, I D = - 20 A
0.0030
0.0036
Drain-Source On-State Resistance a
R DS(on)
V GS = - 4.5 V, I D = - 15 A
0.0039
0.0048
?
V GS = - 2.5 V, I D = - 10 A
0.0062
0.0085
Forward Transconductance a
g fs
V DS = - 15 V, I D = - 20 A
90
S
Dynamic b
Input Capacitance
C iss
6600
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = - 10 V, V GS = 0 V, f = 1 MHz
890
930
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 10 V, V GS = - 10 V, I D = - 20 A
V DS = - 10 V, V GS = - 4.5 V, I D = - 20 A
150
72
12
225
110
nC
Gate-Drain Charge
Q gd
19
Gate Resistance
R g
f = 1 MHz
0.5
2.6
5.2
?
Turn-On Delay Time
t d(on)
45
90
Rise Time
Turn-Off DelayTime
t r
t d(off)
V DD = - 10 V, R L = 1 ?
I D ? - 10 A, V GEN = - 4.5 V, R g = 1 ?
45
100
90
200
Fall Time
Turn-On Delay Time
t f
t d(on)
35
13
70
25
ns
Rise Time
Turn-Off DelayTime
Fall Time
t r
t d(off)
t f
V DD = - 10 V, R L = 1 ?
I D ? - 10 A, V GEN = - 10 V, R g = 1 ?
10
110
25
20
220
50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
- 40 c
- 100
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I F = - 10 A
I F = - 10 A, dI/dt = 100 A/μs, T J = 25 °C
- 0.75
30
17
15
15
- 1.2
60
26
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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